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IRG4BC30U-S - INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT(Vces=600V, Vce(on)typ. = 1.95V, @Vge=15V, Ic=12A) 绝缘栅双极晶体管IGBT的速度超快速(VCES和\u003d 600V电压的Vce(on)的典型。\u003d 1.95V,@和VGE \u003d 15V的,集成电路\u003d 12A条) 600V UltraFast 8-60 kHz Discrete IGBT in a D2-Pak package

IRG4BC30U-S_2446983.PDF Datasheet

 
Part No. IRG4BC30U-S
Description INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT(Vces=600V, Vce(on)typ. = 1.95V, @Vge=15V, Ic=12A) 绝缘栅双极晶体管IGBT的速度超快速(VCES和\u003d 600V电压的Vce(on)的典型。\u003d 1.95V,@和VGE \u003d 15V的,集成电路\u003d 12A条)
600V UltraFast 8-60 kHz Discrete IGBT in a D2-Pak package

File Size 315.06K  /  8 Page  

Maker


International Rectifier, Corp.



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Part: IRG4BC30KD
Maker: IR
Pack: TO-220
Stock: Reserved
Unit price for :
    50: $0.53
  100: $0.51
1000: $0.48

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 Full text search : INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT(Vces=600V, Vce(on)typ. = 1.95V, @Vge=15V, Ic=12A) 绝缘栅双极晶体管IGBT的速度超快速(VCES和\u003d 600V电压的Vce(on)的典型。\u003d 1.95V,@和VGE \u003d 15V的,集成电路\u003d 12A条) 600V UltraFast 8-60 kHz Discrete IGBT in a D2-Pak package


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